A low-power low-mismatch low-glitch class AB first-generation switched-current memory cell and its applications

被引：0

作者：

San-Um, W ^{[1
]}

Srisuchinwong, B ^{[1
]}

Tantaratana, S ^{[1
]}

机构：

[1] Thammasat Univ, Sch Commun Instrumentat & Control Syst, Sirindhorn Int Inst Technol, Pathum Thani 12121, Thailand

来源：

TENCON 2004 - 2004 IEEE REGION 10 CONFERENCE, VOLS A-D, PROCEEDINGS: ANALOG AND DIGITAL TECHNIQUES IN ELECTRICAL ENGINEERING | 2004年

关键词：

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

In this paper, a low-power low-mismatch low-glitch class AB 1(st)-generation switched-current memory cell is presented The technique is relatively simple based on a 1(st)-generation SI memory cell. The power supply is +/- 1V. The average low power consumption is 52 mu W. A maximum useful sampling frequency is 15.7 MHz. Comparisons to other techniques are presented. The paper demonstrates better output waveforms in terms of low offset and mismatch errors, and low glitches. Applications for a delay cell and a modified bilinear integrator are also demonstrated.

引用

页码：D258 / D261

页数：4