Performance of amorphous diamond RF MEMS capacitive switch

被引：11
|
作者：
Webster, JR [1 ]
Dyck, CW [1 ]
Sullivan, JP [1 ]
Friedmann, TA [1 ]
Carton, A [1 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 01期
关键词：
D O I：
10.1049/el:20040034
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Radio frequency microelectromechanical systems (RF MEMS) capacitive switches using amorphous diamond (a-D) as a novel dielectric with controlled leakage have been successfully developed. The devices show a unipolar switching response to a unipolar stimulus, indicating the absence of significant dielectric charging. These initial devices exhibit a down-state capacitance of 2.6 pF and a predicted static power dissipation of 10 nW This technology is promising for the development of reliable, low-power RF MEMS switches.
引用
收藏
页码：43 / 44
页数：2
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