Reflection anisotropy spectroscopy

被引:326
作者
Weightman, P [1 ]
Martin, DS
Cole, RJ
Farrell, T
机构
[1] Univ Liverpool, Dept Phys, Liverpool L69 7ZE, Merseyside, England
[2] Univ Edinburgh, Sch Phys, Edinburgh EH9 3JZ, Midlothian, Scotland
[3] Univ Edinburgh, Ctr Mat Sci & Engn, Edinburgh EH9 3JZ, Midlothian, Scotland
关键词
D O I
10.1088/0034-4885/68/6/R01
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Reflection anisotropy spectroscopy (RAS) is a non-destructive optical probe of surfaces that is capable of operation within a wide range of environments. In this review we trace the development of RAS from its origins in the 1980s as a probe of semiconductor surfaces and semiconductor growth through to the present where it is emerging as a powerful addition to the wide range of existing ultra-high vacuum (UHV) surface science techniques. The principles, instrumentation and theoretical considerations of RAS are discussed. The recent progress in the application of RAS to investigate phenomena at metal surfaces is reviewed, and applications in fields including electrochemistry, molecular assembly, liquid crystal device fabrication and remote stress sensing are discussed. We show that the experimental study of relatively simple surfaces combined with continuing progress in the theoretical description of surface optics promises to unlock the full potential of RAS. This provides a firm foundation for the application of the technique to the challenging fields of ambient, high pressure and liquid environments. It is in these environments that RAS has a clear advantage over UHV-based probes for investigating surface phenomena, and its surface sensitivity, ability to monitor macroscopic areas and rapidity of response make it an ideal complement to scanning probe techniques which can also operate in such environments.
引用
收藏
页码:1251 / 1341
页数:91
相关论文
共 401 条
[1]   ELECTRO-OPTIC EFFECTS IN THE OPTICAL ANISOTROPIES OF (001) GAAS [J].
ACOSTAORTIZ, SE ;
LASTRASMARTINEZ, A .
PHYSICAL REVIEW B, 1989, 40 (02) :1426-1429
[2]   QUANTUM THEORY OF DIELECTRIC CONSTANT IN REAL SOLIDS [J].
ADLER, SL .
PHYSICAL REVIEW, 1962, 126 (02) :413-+
[3]   Ab initio calculation of excitonic effects in the optical spectra of semiconductors [J].
Albrecht, S ;
Reining, L ;
Del Sole, R ;
Onida, G .
PHYSICAL REVIEW LETTERS, 1998, 80 (20) :4510-4513
[4]   Optical anisotropy at the W(110) surface [J].
Ammi, D ;
Ziane, A ;
Bouarab, S .
SURFACE SCIENCE, 2004, 554 (01) :60-67
[5]  
[Anonymous], 1994, INTRO SURFACE CHEM C
[6]   Calculation of the electronic structure and the linear optical response of the Sb- and Sn-Si(111)root 3x root 3 surfaces [J].
Anyele, HT ;
Matthai, CC .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (36) :6585-6596
[7]   The linear optical response of reconstructed Sn/Si(111) surfaces [J].
Anyele, HT ;
Shen, TH ;
Matthai, CC .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (23) :4139-4144
[8]   Surface states at the GaAs(001)2x4 surface [J].
Arciprete, F ;
Goletti, C ;
Placidi, E ;
Hogan, C ;
Chiaradia, P ;
Fanfoni, M ;
Patella, F ;
Balzarotti, A .
PHYSICAL REVIEW B, 2004, 69 (08)
[9]  
ARIPRETE F, 2003, PHYS REV B, V68
[10]   A RHEED AND REFLECTANCE ANISOTROPY STUDY OF THE MBE GROWTH OF GAAS, ALAS AND INAS ON GAAS(001) [J].
ARMSTRONG, SR ;
HOARE, RD ;
PEMBLE, ME ;
POVEY, IM ;
STAFFORD, A ;
TAYLOR, AG ;
JOYCE, BA ;
NEAVE, JH ;
KLUG, DR ;
ZHANG, J .
SURFACE SCIENCE, 1992, 274 (02) :263-269