Mg-doped β-Ga2O3 films with tunable optical band gap prepared on MgO (110) substrates by metal-organic chemical vapor deposition

被引：53

作者：

Feng, Xianjin ^{[1
]}

Li, Zhao ^{[1
]}

Mi, Wei ^{[1
]}

Luo, Yi ^{[1
]}

Ma, Jin ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 34卷

基金：

中国国家自然科学基金;

关键词：

Mg-doped Ga2O3 films; MOCVD; Annealing; Optical properties; OXIDE THIN-FILMS; MOLECULAR-BEAM EPITAXY; TEMPERATURE; MORPHOLOGY; NANOWIRES; STABILITY; SURFACE; GROWTH; PLANE;

D O I：

10.1016/j.mssp.2015.01.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Mg-doped beta-Ga2O3 (beta-Ga2O3: Mg) films have been prepared on the MgO (110) substrates by the metal-organic chemical vapor deposition (MOCVD) technique. The Mg concentration was varied from 1% to 10% (atomic ratio). Post-deposition annealing was performed to investigate its influence on the film properties. The crystallinity was improved obviously after annealing for all the films, with a phase transition from amorphous to polycrystalline observed for the 1-7% Mg-doped films. The average transmittances for the beta-Ga2O3: Mg films in the visible range were all over 90%, with an obvious increase observed in the ultraviolet (UV) region around 300 nm after annealing. The optical band gap of the beta-Ga2O3: Mg films could be modulated from 4.93 to 5.32 eV before annealing, and from 4.87 to 5.22 eV after annealing. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：52 / 57

页数：6

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