Ti/Al/Au OHMIC CONTACTS TO p-TYPE 4H-SiC

被引：0
|
作者：
Han, Chao [1 ]
Zhang, Yuming [1 ]
Song, Qingwen [1 ]
Zhang, Yimen [1 ]
Tang, Xiaoyan [1 ]
Guo, Hui [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词：
CARBIDE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ti/Al/Au ohmic contacts to p-type 4H-SiC with different Ti composition are reported. The contact with high Ti content yields a lower specific contact resistivity (rho(C)) of 6.4x10(-5)Omega cm(2), compared with the low-Ti contained contact. The annealed surface morphology and phase products for these contacts are examined by Scanning Electron Microscope (SEM) and X-ray diffraction (XRD) spectra, respectively. These results reveal that rich Ti prevents the large agglomerate grains from the liquid Al during annealing, which is beneficial for interfacial reaction and formation of the ohmic contact.
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页数：3
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