Ti/Al/Au OHMIC CONTACTS TO p-TYPE 4H-SiC

被引：0
|
作者：
Han, Chao [1 ]
Zhang, Yuming [1 ]
Song, Qingwen [1 ]
Zhang, Yimen [1 ]
Tang, Xiaoyan [1 ]
Guo, Hui [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词：
CARBIDE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ti/Al/Au ohmic contacts to p-type 4H-SiC with different Ti composition are reported. The contact with high Ti content yields a lower specific contact resistivity (rho(C)) of 6.4x10(-5)Omega cm(2), compared with the low-Ti contained contact. The annealed surface morphology and phase products for these contacts are examined by Scanning Electron Microscope (SEM) and X-ray diffraction (XRD) spectra, respectively. These results reveal that rich Ti prevents the large agglomerate grains from the liquid Al during annealing, which is beneficial for interfacial reaction and formation of the ohmic contact.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC
    Jennings, M. R.
    Perez-Tomas, A.
    Davies, M.
    Walker, D.
    Zhu, L.
    Losee, P.
    Huang, W.
    Balachandran, S.
    Guy, O. J.
    Covington, J. A.
    Chow, T. P.
    Mawby, P. A.
    SOLID-STATE ELECTRONICS, 2007, 51 (05) : 797 - 801
  • [32] Development of low resistance Al/Ti stacked metal contacts to p-type 4H-SiC
    Jennings, M. R.
    Perez-Tomas, A.
    Walker, D.
    Zhu, L.
    Losee, P.
    Huang, W.
    Balachandran, S.
    Guy, O. J.
    Covington, J. A.
    Chow, T. P.
    Mawby, P. A.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 697 - +
  • [33] Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiC
    Byung-Teak Lee
    Jong-Yoon Shin
    Seon-Hoon Kim
    Jin-Hyeok Kim
    Sang-Yoon Han
    Jong Lam Lee
    Journal of Electronic Materials, 2003, 32 : 501 - 504
  • [34] Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiC
    Lee, BT
    Shin, JY
    Kim, SH
    Kim, JH
    Han, SY
    Lee, JL
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (06) : 501 - 504
  • [35] Searching for device processing compatible ohmic contacts to implanted p-type 4H-SiC
    Luo, YB
    Yan, F
    Tone, K
    Zhao, JH
    Crofton, J
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1013 - 1016
  • [36] Searching for device processing compatible ohmic contacts to implanted p-type 4H-SiC
    Luo, Yanbin
    Yan Feng
    Tone, Kiyoshi
    Zhao, Jian H.
    Crofton, John
    Materials Science Forum, 2000, 338
  • [37] Structural and morphological characterization of Al/Ti-based ohmic contacts on p-type 4H-SiC annealed under various conditions
    Vassilevski, KV
    Zekentes, K
    Constantinidis, G
    Papanicolaou, N
    Nikitina, IP
    Babanin, AI
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1017 - 1020
  • [38] Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC
    Chang, SC
    Wang, SJ
    Uang, KM
    Liou, BW
    SOLID-STATE ELECTRONICS, 2005, 49 (12) : 1937 - 1941
  • [39] Comparison of Pt-based ohmic contacts with Ti-Al ohmic contacts for p-type SiC
    Mohammad, FA
    Cao, Y
    Chang, KC
    Porter, LM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (08): : 5933 - 5938
  • [40] Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature
    Frazzetto, A.
    Giannazzo, F.
    Lo Nigro, R.
    Raineri, V.
    Roccaforte, F.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (25)
12345