Dominant SILC mechanisms in HfO2/TiN gate NMOS and PMOS transistors

被引：10

作者：

Krishnan, SA ^{[1
]}

Peterson, JJ ^{[1
]}

Young, CD ^{[1
]}

Brown, G ^{[1
]}

Choi, R ^{[1
]}

Harris, R ^{[1
]}

Sim, JH ^{[1
]}

Zeitzoff, P ^{[1
]}

Kirsch, P ^{[1
]}

Gutt, J ^{[1
]}

Li, HJ ^{[1
]}

Matthews, K ^{[1
]}

Lee, JC ^{[1
]}

Lee, BH ^{[1
]}

Bersuker, G ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

来源：

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年

关键词：

D O I：

10.1109/RELPHY.2005.1493183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：642 / 643

页数：2

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