Dominant SILC mechanisms in HfO2/TiN gate NMOS and PMOS transistors

被引：10
|
作者：
Krishnan, SA [1 ]
Peterson, JJ [1 ]
Young, CD [1 ]
Brown, G [1 ]
Choi, R [1 ]
Harris, R [1 ]
Sim, JH [1 ]
Zeitzoff, P [1 ]
Kirsch, P [1 ]
Gutt, J [1 ]
Li, HJ [1 ]
Matthews, K [1 ]
Lee, JC [1 ]
Lee, BH [1 ]
Bersuker, G [1 ]
机构：
[1] SEMATECH, Austin, TX 78741 USA
来源：
2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年
关键词：
D O I：
10.1109/RELPHY.2005.1493183
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：642 / 643
页数：2
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