STM analysis of wet-chemically prepared H-Si(001) surface

被引：13
|
作者：
Morita, Y
Tokumoto, H
机构：
[1] Jt. Res. Center for Atom Technology, Natl. Inst. for Adv. Interdisc. Res., Tsukuba, Ibaraki 305
来源：
APPLIED SURFACE SCIENCE | 1996年 / 100卷
关键词：
D O I：
10.1016/0169-4332(96)00316-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Microroughness of wet-chemically prepared Si(001) surfaces was measured in an atomic scale by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). On the surface treated by 2.5%-HF solution (pH = 2), the root mean square (rms) value for the surface roughness was about 1.4 Angstrom, whose surface exhibited the unclear steplike structure of Si(001) surface. On the other hand, the STM images on the surface treated by HF:HCl = 1:19 solution (pH < 1) under the controlled removal of the oxide layer, the SRM image exhibited clear step structure without etch pits, and the rms value for the surface roughness is the same as that of the 2.5% HF treated sample.
引用
收藏
页码：440 / 443
页数：4
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