24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design

被引：207

作者：

Chen, Daming ^{[1
]}

Chen, Yifeng ^{[1
]}

Wang, Zigang ^{[1
]}

Gong, Jian ^{[1
]}

Liu, Chengfa ^{[1
]}

Zou, Yang ^{[1
]}

He, Yu ^{[1
]}

Wang, Yao ^{[1
]}

Yuan, Ling ^{[1
]}

Lin, Wenjie ^{[1
,2
]}

Xia, Rui ^{[1
]}

Yin, Li ^{[1
]}

Zhang, Xueling ^{[1
]}

Xu, Guanchao ^{[1
]}

Yang, Yang ^{[1
]}

Shen, Hui ^{[2
]}

Feng, Zhiqiang ^{[1
]}

Altermatt, Pietro P. ^{[1
]}

Verlinden, Pierre J. ^{[1
,2
,3
]}

机构：

[1] Trina Solar, State Key Lab Photovolta Sci & Technol, Changzhou 213031, Jiangsu, Peoples R China

[2] Sun Yat Sen Univ, Inst Solar Energy Syst, Guangzhou 510006, Peoples R China

[3] AMROCK Pty Ltd, Mclaren Vale, SA 5171, Australia

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2020年 / 206卷

基金：

国家重点研发计划;

关键词：

Passivating contacts; i-TOPCon; n-type; Bifacial;

D O I：

10.1016/j.solmat.2019.110258

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We demonstrate an "industrial tunnel oxide passivated contacts" (i-TOPCon) silicon solar cell on large area n-type silicon wafers (156.75 mm x 156.75 mm). This cell has a boron diffused front emitter, a tunnel-SiOx/n(+)-poly-Si/SiNx:H structure at the rear side, and screen-printed electrodes on both sides. The passivation of the tunnel-SiOx/n(+)-poly-Si/SiNx:H structure on silicon wafers is investigated. The saturation currents J(o) of this structure on polished and textured silicon surfaces are 1.3 and 3.7 fA/cm(2), respectively. After printing the Ag contacts, the J(o) of this structure increases to 50.7 fA/cm(2) on textured silicon surfaces, which is still manageably low for metal contacts. This structure was applied to i-TOPCon solar cells, resulting in a median efficiency of 23.91%, measured in-house, and a champion efficiency of 24.58%, independently confirmed by the ISFH CalTeC in Germany. The champion efficiency was measured with total area illumination, including screen-printed fingers and busbars.

引用

页数：8

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