The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4

被引：107

作者：

Bruls, RJ ^{[1
]}

Hintzen, HT ^{[1
]}

de With, G ^{[1
]}

Metselaar, R ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Lab Solid State & Mat Chem, NL-5600 MB Eindhoven, Netherlands

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2001年 / 21卷 / 03期

关键词：

AlN; Debye temperature; elastic modulus; MgSiN2; Si3N4;

D O I：

10.1016/S0955-2219(00)00210-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The temperature dependence of the Youngs modulus of MgSiN2 and AlN was measured between 293 and 973 K using the impulse excitation method and compared with literature data reported for Si3N4 The data could be fitted with E = E-o - B.T exp(-T-o/T). The values of the fitting parameters E-o and T-o are related to the Debye temperature, and the parameter B to the harmonic character of the bond, (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：263 / 268

页数：6

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