Influence of the deposition time and temperature on the texture of InN thin films grown by RF-magnetron sputtering

被引：0
|
作者：
Braic, L. [1 ]
Zoita, N. C. [1 ]
机构：
[1] Natl Inst Optoelect, RO-077125 Bucharest, Romania
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2010年 / 4卷 / 12期
关键词：
Indium nitride; Growth temperature; Crystalline structure; Band-gap; RF-magnetron sputtering; MOLECULAR-BEAM EPITAXY; CHEMICAL-VAPOR-DEPOSITION; FUNDAMENTAL-BAND GAP; INDIUM NITRIDE; OPTICAL-PROPERTIES; WURTZITE INN; SEMICONDUCTORS; ABSORPTION; GENERATION; DIODE;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium nitride is an attractive semiconductor material for optoelectronic applications, high-speed electronics and solar cells. We report successful deposition of polycrystalline InN thin films onto un-etched plain (100) Si substrates by reactive RF magnetron sputtering method. The crystallographic characterization data and band-gap values are presented in relation with the films growth temperature and deposition time.
引用
收藏
页码：2013 / 2017
页数：5
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