Principles and features of single-photon avalanche diode arrays

被引：270

作者：

Zappa, F. ^{[1
]}

Tisa, S. ^{[1
]}

Tosi, A. ^{[1
]}

Cova, S. ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2007年 / 140卷 / 01期

关键词：

single-photon avalanche diode (SPAD); photodetector arrays; imaging; photon counting;

D O I：

10.1016/j.sna.2007.06.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This is the first of two serial papers dealing on single-photon avalanche diode (SPAD) topics. Aim of the series is to discuss in depth the design and fabrication of our SPAD-A array system for two-dimensional single-photon imaging, able to count and time-tag single photons by means of a monolithic array sensor. This paper deals with the device structure and characterization. The second paper will present the developed fast electronics and will show the overall performance reached in passive, active, and gated regimes. In this first paper we review the working principle and the features of single-photon detector pixels, with particular attention to the monolithic array integration. Then we discuss design criteria, trade-offs, and how to chose operating conditions to attain best performances out of individual pixels. Finally, experimental data will be thoroughly discussed. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：103 / 112

页数：10

共 30 条

[11] IMPROVING THE PERFORMANCE OF COMMERCIALLY AVAILABLE GEIGER-MODE AVALANCHE PHOTODIODES [J].

GHIONI, M ;

RIPAMONTI, G .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1991, 62 (01) :163-167

[12]

GHIONI M, 1996, RE SCI INTRUM, P3440

[13]

Grove A.S., 1967, PHYS TECHNOLOGY SEMI

[14]

HURKX GAM, 1992, IEEE T ELECTRON DEV, V39

[15] ULTRAFAST MICROCHANNEL PLATE PHOTOMULTIPLIERS [J].

KUME, H ;

KOYAMA, K ;

NAKATSUGAWA, K ;

SUZUKI, S ;

FATLOWITZ, D .

APPLIED OPTICS, 1988, 27 (06) :1170-1178

[16] DOUBLE EPITAXY IMPROVES SINGLE-PHOTON AVALANCHE-DIODE PERFORMANCE [J].

LACAITA, A ;

GHIONI, M ;

COVA, S .

ELECTRONICS LETTERS, 1989, 25 (13) :841-843

[17] STRONG DEPENDENCE OF TIME RESOLUTION ON DETECTOR DIAMETER IN SINGLE PHOTON AVALANCHE-DIODES [J].

LACAITA, A ;

MASTRAPASQUA, M .

ELECTRONICS LETTERS, 1990, 26 (24) :2053-2054

[18]

LACAITA A, 1995, SPIE P, V2550

[19] ON THE BREMSSTRAHLUNG ORIGIN OF HOT-CARRIER-INDUCED PHOTONS IN SILICON DEVICES [J].

LACAITA, AL ;

ZAPPA, F ;

BIGLIARDI, S ;

MANFREDI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :577-582

[20] SINGLE-PHOTON AVALANCHE-DIODE FOR SINGLE-MOLECULE DETECTION [J].

LI, LQ ;

DAVIS, LM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (06) :1524-1529

← 1 2 3 →