Evaluation of Grain-Boundary Conduction of Dense AlN-SiC Solid Solution by Scanning Nonlinear Dielectric Microscopy

被引：17

作者：

Kobayashi, Ryota ^{[1
]}

Tatami, Junichi ^{[1
]}

Wakihara, Toru ^{[1
]}

Komeya, Katsutoshi ^{[1
]}

Meguro, Takeshi ^{[1
]}

Tu, Rong ^{[2
]}

Goto, Takashi ^{[2
]}

机构：

[1] Yokohama Natl Univ, Grad Sch Environm & Informat Sci, Yokohama, Kanagawa 2408501, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2010年 / 93卷 / 12期

关键词：

ALUMINUM NITRIDE; FABRICATION; CERAMICS;

D O I：

10.1111/j.1551-2916.2010.04230.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Dense and elemental homogeneous 2H AlN-SiC solid solution doped with Al and C was fabricated by using spark plasma sintering. The p-type electrical conduction of the sample was confirmed by measurements of electrical conductivities and Seebeck coefficient. Dopant profiling of the sample by scanning nonlinear dielectric microscopy showed that the AlN-SiC grains respond to p-type electrical conduction. These results indicated that added Al and C were dissolved to the grains and acted as p-type dopants. In contrast, the grain boundaries did not show any response, suggesting the presence of depletion layer in the boundary.

引用

页码：4026 / 4029

页数：4

共 23 条

[1]

ANDO K, 2004, HYOUMEN KAGAKU, V25, P296

[2] Growth of AlN-SiC solid solutions by sequential supply epitaxy [J].