Temperature dependence of the subthreshold characteristics of dynamic threshold metal-oxide-semiconductor field-effect transistors and its application to an absolute-temperature sensing scheme for low-voltage operation

被引：2

作者：

Terauchi, Mamoru ^{[1
]}

机构：

[1] Hiroshima Univ, Fac Informat Sci, Hiroshima 7313194, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 7A期

关键词：

dynamic threshold MOSFET; silicon-on-insulator; absolute-temperature sensing;

D O I：

10.1143/JJAP.46.4102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this report the author proposes an absolute-temperature sensing scheme based on the temperature dependence of the subthreshold current-voltage characteristics of dynamic threshold metal-oxide-semiconductor (DTMOS) field-effect transistor devices. The proposed sensing scheme requires neither a voltage higher than 0.5 V nor initial precise calibration. It is suitable for silicon-on-insulator (SOI) circuits based on the SOI technology using an SOI substrate, but it can also be easily applied to bulk MOS devices.

引用

页码：4102 / 4104

页数：3

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