Hg3P2S8: A New Promising Infrared Nonlinear Optical Material with a Large Second-Harmonic Generation and a High Laser-Induced Damage Threshold

被引:94
|
作者
Chu, Yu [1 ,2 ]
Wang, Peng [1 ]
Zeng, Hao [1 ]
Cheng, Shichao [1 ]
Su, Xin [1 ]
Yang, Zhihua [1 ,2 ]
Li, Junjie [1 ,2 ]
Pan, Shilie [1 ,2 ]
机构
[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, CAS Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
RICH SOURCE; CRYSTAL; SHG; RB; SN; GE; SEMICONDUCTORS; THIOPHOSPHATES; PREDICTION; AGGAS2;
D O I
10.1021/acs.chemmater.1c01982
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The development of new infrared (IR) nonlinear optical (NLO) materials with strong second-harmonic generation (SHG) responses and high laser-induced damage thresholds (LIDTs) is urgent but challenging. Herein, the defective diamond-like chalcogenide Hg3P2S8 (HPS) was rationally designed and fabricated by a flexible and rigid tetrahedral motif combined strategy. HPS exhibits a phase-matching SHG response of similar to 3.6 x AGS (the largest one in the reported ternary sulfides), high LIDT (similar to 3 x AGS), wide IR transparent region (0.43-16.3 mu m), moderate birefringence (0.043 at 1064 nm), and good physicochemical stability and crystal growth habits. Theoretical analyses confirm that the large SHG effect originates from the synergistic effects between distorted HgS4, PS4, and vacancy-induced nonbonding electrons. The results indicate that HPS is a promising NLO candidate for high-power, high-efficiency laser output in the mid-IR region, which provides an insight into the exploration of new IR NLO materials.
引用
收藏
页码:6514 / 6521
页数:8
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