Highly stable fluorine-passivated In-Ga-Zn-O thin-film transistors under positive gate bias and temperature stress

被引：37

作者：

Jiang, Jingxin ^{[1
]}

Toda, Tatsuya ^{[1
]}

Hung, Mai Phi ^{[1
]}

Wang, Dapeng ^{[1
,2
]}

Furuta, Mamoru ^{[1
,2
]}

机构：

[1] Kochi Univ Technol, Kami, Kochi 7828502, Japan

[2] Kochi Univ Technol, Ctr Nanotechnol, Res Inst, Kami, Kochi 7828502, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 11期

关键词：

HYDROGEN;

D O I：

10.7567/APEX.7.114103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A highly stable fluorine-passivated In-Ga-Zn-O (IGZO) thin-film transistor (TFT) was demonstrated under positive gate bias and temperature stress (PBTS). The defects in the IGZO TFT were passivated by fluorine, which was introduced into a SiOx etching stopper during the deposition of fluorinated silicon nitride for passivation and diffused during post-fabrication annealing. From the results of secondary ion mass spectrometry analysis, the reliability of the IGZO TFT under PBTS was observed to be markedly improved even at a stress temperature of 100 degrees C when fluorine diffusion was detected in the IGZO channel. The fluorine-passivated IGZO TFT has improved operation temperature and is advantageous for achieving high-performance and high-reliability oxide TFTs for next-generation displays. (C) 2014 The Japan Society of Applied Physics

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页数：4

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