Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

被引:50
作者
Chen, Ding-Yuan [1 ]
Malmros, Anna [2 ]
Thorsell, Mattias [2 ]
Hjelmgren, Hans [2 ]
Kordina, Olof [1 ]
Chen, Jr-Tai [1 ]
Rorsman, Niklas [2 ]
机构
[1] SweGaN AB, S-58330 Linkoping, Sweden
[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
基金
欧盟地平线“2020”;
关键词
GaN; HEMTs; microwave; buffer-free" 23 heterostructure; ALGAN/GAN HEMTS; DEFECTS;
D O I
10.1109/LED.2020.2988074
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure without a conventional thick doped buffer. The HEMT is fabricated on a high-quality 0.25 mu m unintentional doped GaN layer grown directly on a transmorphic epitaxially grown AlN nucleation layer. This approach allows the AlN-nucleation layer to act as a back-barrier, limiting short channel effects and removing buffer leakage. The devices with the 'buffer-free' heterostructure show competitive DC and RF characteristics, as benchmarked against the devices made on a commercial Fe-doped epi-wafer. Peak transconductances of 500 mS/mm and a maximum saturated drain current of similar to 1 A/mm are obtained. An extrinsic f(T) of 70 GHz and f(max) of 130 GHz are achieved for transistors with a gate length of 100 nm. Pulsed-IV measurements reveal a lower current slump and a smaller knee walkout. The dynamic IV performance translates to an output power of 4.1 W/mm, as measured with active load-pull at 3 GHz. These devices suggest that the 'buffer-free' concept may offer an alternative route for high frequency GaN HEMTs with less electron trapping effects.
引用
收藏
页码:828 / 831
页数:4
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