Evidence of electron-phonon interaction on transport in n- and p-type silicon nanowires

被引：7

作者：

Vaurette, F. ^{[1
]}

Leturcq, R. ^{[1
]}

Nys, J. P. ^{[1
]}

Deresmes, D. ^{[1
]}

Grandidier, B. ^{[1
]}

Stievenard, D. ^{[1
]}

机构：

[1] CNRS, IEMN, Dept ESEN, UMR 8520, F-59046 Lille, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

关键词：

D O I：

10.1063/1.2949072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors studied the transport in n- and p-type silicon nanowires. When the temperature decreases from 325 to 75 K, they observed a variation of the nanowire resistance, consistent with a transport governed by electron-phonon scattering. The lateral size of the nanowire down to 25 nm is not found to cause further surface scattering, due to the presence of interface states which create a depleted region in the nanowires. Such depleted region allows thus to keep a carrier mobility in the nanowires similar to the bulk one. (C) 2008 American Institute of Physics.

引用

页数：3

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