Microstructures of GaN1-xPx layers grown on (0001)GaN substrates by gas source molecular beam epitaxy

被引:20
作者
Seong, TY [1 ]
Bae, IT
Choi, CJ
Noh, DY
Zhao, Y
Tu, CW
机构
[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 506712, South Korea
[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
关键词
D O I
10.1063/1.369693
中图分类号
O59 [应用物理学];
学科分类号
摘要
Transmission electron microscope (TEM), transmission electron diffraction (TED), and synchrotron x-ray diffraction (XRD) studies have been performed to investigate microstructural behavior of gas source molecular beam epitaxial GaN1-xPx layers grown on (0001) GaN/sapphire at temperatures (T (g)) in the range 500-760 degrees C. TEM, TED, and XRD results indicate that the samples grown at T (g) less than or equal to 600 degrees C undergo phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the samples grown at T-g greater than or equal to 730 degrees C are found to be binary zinc-blende GaN(P) single crystalline materials. As for the 500 degrees C layer, the two phases are randomly oriented and distributed, whereas the 600 degrees C layer consists of phases that are elongated and inclined by 60 degrees-70 degrees clockwise from the [0001](alpha-GaN) direction. The samples grown at T (g) greater than or equal to 730 degrees C are found to consist of two types of microdomains, namely, GaN(P)(I) and GaN(P)(II); the former having twin relation to the latter. (C) 1999 American Institute of Physics.
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页码:3192 / 3197
页数:6
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