Assessment of the potential of tin sulphide thin films prepared by sulphurization of metallic precursors as cell absorbers

被引：63

作者：

Malaquias, J. ^{[1
]}

Fernandes, P. A. ^{[1
,2
]}

Salome, P. M. P. ^{[1
]}

da Cunha, A. F. ^{[1
]}

机构：

[1] Univ Aveiro, Dept Fis I3N, P-3810193 Aveiro, Portugal

[2] Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, P-4200072 Oporto, Portugal

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

关键词：

Tin sulphide; Sulphurization; Thin film; Solar cell; SNS FILMS;

D O I：

10.1016/j.tsf.2011.01.393

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, SnxSy thin films have been grown on soda-lime glass substrates by sulphurization of metallic precursors in a nitrogen plus sulphur vapour atmosphere. Different sulphurization temperatures were tested, ranging from 300 degrees C to 520 degrees C. The resulting phases were structurally investigated by X-Ray Diffraction and Raman spectroscopy. Composition was studied using Energy Dispersive Spectroscopy being then correlated with the sulphurization temperature. Optical measurements were performed to obtain transmittance and reflectance spectra, from which the energy band gaps, were estimated. The values obtained were 1.17 eV for the indirect transition and for the direct transition the values varied from 1.26 eV to 1.57 eV. Electrical characterization using Hot Point Probe showed that all samples were p-type semiconductors. Solar cells were built using the structure: SLG/Mo/SnxSy/CdS/ZnO:Ga and the best result for solar cell efficiency was 0.17%. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：7416 / 7420

页数：5

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