A structural investigation of Ga3-xIn5+xSn2O16

The structure of the recently reported transparent conductor, Ga3-xIn5+xSn2O16 (0.3 < x < 1.6), was established by a combination of high-resolution electron microscopy, convergent-beam electron diffraction, and Rietveld analysis of powder diffraction data (X-ray and time-of-flight neutron methods), This "T-phase" compound has an anion-deficient fluorite-derivative structure whose space group is I4(1)/a. Although there are similarities to the parent oxide structures, the T-phase lacks one of the distorted InO6 octahedra observed in In2O3, which may account for its inability to be donor-doped by Sn. (C) 1998 Academic Press.