Porous, multi-layered piezoelectric composites based on highly oriented PZT/PVDF electrospinning fibers for high-performance piezoelectric nanogenerators

被引:102
|
作者
Du, Xiangxin [1 ]
Zhou, Zheng [1 ]
Zhang, Zhao [1 ]
Yao, Liqin [1 ]
Zhang, Qilong [1 ]
Yang, Hui [1 ]
机构
[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
piezoelectric composite; piezoelectric nanogenerator (PENG); porous structure; Pb(Zr0.52Ti0.48)O-3 (PZT); PZT/PVDF electrospinning fibers; flexible self-powered devices; NANOCOMPOSITE FIBERS; FILMS; NANOFIBERS; MORPHOLOGY; MEMBRANES; CONTACT; OUTPUT; BETA;
D O I
10.1007/s40145-021-0537-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Piezoelectric nanogenerators (PENGs) that can harvest mechanical energy from ambient environment have broad prospects for multi-functional applications. Here, multi-layered piezoelectric composites with a porous structure based on highly oriented Pb(Zr0.52Ti0.48)O-3/PVDF (PZT/PVDF) electrospinning fibers are prepared via a laminating method to construct high-performance PENGs. PZT particles as piezoelectric reinforcing phases are embedded in PVDF fibers and facilitate the formation of polar beta phase in PVDF. The multi-layered, porous structure effectively promotes the overall polarization and surface bound charge density, resulting in a highly efficient electromechanical conversion. The PENG based on 10 wt% PZT/PVDF composite fibers with a 220 mu m film thickness outputs an optimal voltage of 62.0 V and a power of 136.9 mu W, which are 3.4 and 6.5 times those of 10 wt% PZT/PVDF casting film-based PENG, respectively. Importantly, the PENG shows a high sensitivity of 12.4 V.N-1, presenting a significant advantage in comparison to PENGs with other porous structures. In addition, the composites show excellent flexibility with a Young's modulus of 227.2 MPa and an elongation of 262.3%. This study shows a great potential application of piezoelectric fiber composites in flexible energy harvesting devices.
引用
收藏
页码:331 / 344
页数:14
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