Strongly oriented Co3O4 thin films on MgO(100) and MgAl2O4(100) substrates by PE-CVD

被引：25

作者：

Barreca, Davide ^{[1
,2
]}

Devi, Anjana ^{[3
]}

Fischer, Roland A. ^{[3
]}

Bekermann, Daniela

Gasparotto, Alberto ^{[1
]}

Gavagnin, Marco

Maccato, Chiara

Tondello, Eugenio

Bontempi, Elza ^{[4
]}

Depero, Laura E. ^{[4
]}

Sada, Cinzia ^{[5
,6
]}

机构：

[1] Univ Padua, Dept Chem, CNR ISTM, I-35131 Padua, Italy

[2] Univ Padua, Dept Chem, INSTM, I-35131 Padua, Italy

[3] Ruhr Univ Bochum, Lehrstuhl Anorgan Chem 2, D-44780 Bochum, Germany

[4] Univ Brescia, Chem Technol Lab, I-25123 Brescia, Italy

[5] Univ Padua, Dept Phys, I-35131 Padua, Italy

[6] Univ Padua, CNISM, I-35131 Padua, Italy

来源：

CRYSTENGCOMM | 2011年 / 13卷 / 11期

关键词：

COBALT OXIDE-FILMS; VAPOR-PHASE SYNTHESIS; EPITAXIAL-GROWTH; LOW-TEMPERATURE; LOW-PRESSURE; PRECURSOR; DEPOSITION; CHEMISTRY; METAL;

D O I：

10.1039/c1ce05280b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Co3O4 thin films were grown on MgO(100) and MgAl2O4(100) by plasma enhanced-chemical vapor deposition (PE-CVD) from the [Co(dpm)(2)] precursor. Depositions on both single crystal substrates were performed from Ar/O-2 plasmas at temperatures between 100 and 400 degrees C in order to tailor the chemical and physical properties of the synthesized films. The composition, morphology and structure of the Co3O4 systems were thoroughly analyzed by XPS, SIMS, FE-SEM and bidimensional XRD. The obtained results evidenced the formation of high-purity and strongly oriented Co3O4 thin films, with features dependent on the used substrate and the adopted growth temperature.

引用

页码：3670 / 3673

页数：4

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