Optical Confinement Study of Laser MBE Grown InGaN/GaN Quantum Well Structure using Surface Plasmon Resonance Technique

Laser Molecular Beam Epitaxy (Laser MBE) technique is utilized for the growth of InGaN/GaN quantum well (QW) structure. Present work reports the optimization of QW structure (3 to 7 QWs) using indigenously developed Surface Plasmon Resonance (SPR) technique in Otto Configuration and Electrical, structural and optical properties of the QWs were studied using Hall measurement, X-ray diffraction and Photoluminescence spectroscopy respectively. Five QWs structure with well width of 6 nm (InGaN) and 8 nm (GaN) is optimized to be exhibiting for maximum charge confinement using the SPR studies and these results are found to be in agreement with that obtained from Photoluminescence spectroscopy study. A dispersion in refractive index (n) is observed with the wavelength of incident laser light. The results indicate that the optimized QW structure is essentially required for the fabrication of highly efficient LEDs and solid-state light sources.