Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer

被引：14

作者：

Zhao, Jianguo ^{[1
]}

Zhang, Xiong ^{[1
]}

Wu, Zili ^{[1
]}

Dai, Qian ^{[1
]}

Wang, Nan ^{[1
]}

He, Jiaqi ^{[1
]}

Chen, Shuai ^{[2
]}

Feng, Zhe Chuan ^{[2
]}

Cui, Yiping ^{[1
]}

机构：

[1] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China

[2] Guangxi Univ, Coll Phys Sci & Technol, Lab Optoelect Mat & Detect Technol, Guangxi Key Lab Relativist Astrophys, Nanning 530004, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 729卷

关键词：

Non-polar a-plane GaN; Nano-scale island-like SiNx interlayer; Crystalline quality anisotropy reduction; In-plane strain compensation; QUANTUM-DOTS; RAMAN; SAPPHIRE; SEMICONDUCTORS; GROWTH;

D O I：

10.1016/j.jallcom.2017.09.230

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The reduction in the crystalline quality anisotropy and the in-plane strain for the non-polar a-plane GaN epi-layer with nano-scale island-like SiNx interlayer was studied extensively with scanning electron microscopy, high-resolution X-ray diffraction measurement, and Raman spectroscopy. It was demonstrated that the SiNx interlayer was powerful to suppress the crystalline quality anisotropy in the a-plane GaN epi-layer since the full width at half maximum values of the X-ray rocking curves for both c-direction and m-direction were reduced from 1108 to 780 arcsec and from 2077 to 806 arcsec, respectively. The Raman measurement results also reveal that the SiNx interlayer plays a crucial role in compensating the in-plane strains. In fact, the in-plane compressive strain along m-direction and the tensile strain along c-direction were found to be decreased by approximately 62% and 78%, respectively due to the insertion of the SiNx interlayer. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：992 / 996

页数：5

共 24 条

[1] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[2] PIEZOSPECTROSCOPIC STUDY OF RAMAN-SPECTRUM OF CADMIUM-SULFIDE [J].

BRIGGS, RJ ;

RAMDAS, AK .

PHYSICAL REVIEW B, 1976, 13 (12) :5518-5529

[3] Anisotropic strain and phonon deformation potentials in GaN [J].

Darakchieva, V. ;

Paskova, T. ;

Schubert, M. ;

Arwin, H. ;

Paskov, P. P. ;

Monemar, B. ;

Hommel, D. ;

Heuken, M. ;

Off, J. ;

Scholz, F. ;

Haskell, B. A. ;

Fini, P. T. ;

Speck, J. S. ;

Nakamura, S. .

PHYSICAL REVIEW B, 2007, 75 (19)

[4] Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC [J].

Davydov, VY ;

Averkiev, NS ;

Goncharuk, IN ;

Nelson, DK ;

Nikitina, IP ;

Polkovnikov, AS ;

Smirnov, AN ;

Jacobsen, MA ;

Semchinova, OK .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5097-5102

[5] Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy [J].

Founta, S ;

Rol, F ;

Bellet-Amalric, E ;

Bleuse, J ;

Daudin, B ;

Gayral, B ;

Mariette, H ;

Moisson, C .

APPLIED PHYSICS LETTERS, 2005, 86 (17) :1-3

[6] Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots -: art. no. 011101 [J].

Garro, N ;

Cros, A ;

Budagosky, JA ;

Cantarero, A ;

Vinattieri, A ;

Gurioli, M ;

Founta, S ;

Mariette, H ;

Daudin, B .

APPLIED PHYSICS LETTERS, 2005, 87 (01)

[7] Properties of GaN and related compounds studied by means of Raman scattering [J].

Harima, H .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (38) :R967-R993

[8] Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire [J].

Jiang, Teng ;

Xu, Sheng-rui ;

Zhang, Jin-cheng ;

Xie, Yong ;

Hao, Yue .

SCIENTIFIC REPORTS, 2016, 6

[9] Properties of non-polar a-plane GaN/AlGaN quantum wells [J].

Kappers, M. J. ;

Hollander, J. L. ;

Johnston, C. F. ;

McAleese, C. ;

Rao, D. V. Sridhara ;

Sanchez, A. M. ;

Humphreys, C. J. ;

Badcock, T. J. ;

Dawson, P. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) :4983-4986

[10] Effect of Basal-plane Stacking Faults on X-ray Diffraction of Non-polar (11(2)over-bar0) a-plane GaN Films Grown on (1(1)over-bar02) r-plane Sapphire Substrates [J].

Kim, Ji Hoon ;

Hwang, Sung-Min ;

Baik, Kwang Hyeon ;

Park, Jung Ho .

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14 (05) :557-565

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