Electronic structure analysis of threading screw dislocations in 4H-SiC using electron holography

被引：14

作者：

Chung, Suk ^{[1
]}

Berechman, Ronen A. ^{[1
]}

McCartney, Martha R. ^{[2
]}

Skowronski, Marek ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 03期

关键词：

BIAS LEAKAGE CURRENT; SURFACE-DEFECTS; BREAKDOWN; GAN; CHARGE; LIMITS;

D O I：

10.1063/1.3544066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Off-axis electron holography has been used to map the electrostatic potential distribution of threading screw dislocations in differently n-doped 4H-SiC epitaxial layers. Observed phase contrast indicated the presence of a negatively charged dislocation core. Comparison between experimental and simulated potential profiles indicated that the density of trapped charges increased for a higher doped epilayer. Assuming a single level of the trap at the core, the ionization energy of the trap was calculated to be 0.89 +/- 0.22 eV. (C) 2011 American Institute of Physics. [doi:10.1063/1.3544066]

引用

页数：6

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