Hardness of C, CNx, and AlN thin films after rapid thermal annealing

被引：6

作者：

Beshkov, G

Vassilev, GP

Elizalde, MR

Gomez-Acebo, T

机构：

[1] Univ Sofia, Fac Chem, BU-1164 Sofia, Bulgaria

[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

[3] CEIT, San Sebastian 20018, Spain

[4] Univ Navarra, TECNUN, San Sebastian 20018, Spain

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 82卷 / 02期

关键词：

thin layers; nitrides; nanoindentation; microhardness;

D O I：

10.1016/S0254-0584(03)00280-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The hardness and elastic modulus of C, CNx and AIN thin films after rapid thermal annealing have been investigated using nanoindentation and microhardness measurements techniques. The thin films have been deposited on silicon by plasma enhanced chemical vapor deposition using CCl4, ksilol and NH3 as precursors for CNchi layers. The film thickness was between 30 and 150 nm. Carbon and AIN thin films have been prepared using rapid thermal annealing. It has been found that the highest values for hardness (17.7 GPa) correspond to the samples prepared with CCl4 and NH3 as precursors, and subjected to rapid thermal annealing at 1400 K min(-1). (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：452 / 457

页数：6

共 20 条

[1] Multilayers of amorphous carbon prepared by cathodic arc deposition [J].