A Selectively Colorful yet Chilly Perspective on the Highs and Lows of Dielectric Materials for CMOS Nanoelectronics

被引：7

作者：

King, S. ^{[1
]}

Plombon, J. ^{[1
]}

Bielefeld, J. ^{[1
]}

Blackwell, J. ^{[1
]}

Vyas, S. ^{[1
]}

Chebiam, R. ^{[1
]}

Naylor, C. ^{[1
]}

Michalak, D. ^{[1
]}

Kobrinsky, M. ^{[1
]}

Gstrein, F. ^{[1
]}

Metz, M. ^{[1
]}

Clarke, J. ^{[1
]}

Thapa, R. ^{[2
]}

Paquette, M. ^{[2
]}

Vemuri, V. ^{[3
]}

Strandwitz, N. ^{[3
]}

Fan, Y. ^{[4
]}

Orlowski, M. ^{[4
]}

机构：

[1] Intel Corp, Hillsboro, OR 97124 USA

[2] Univ Missouri, Kansas City, MO 64110 USA

[3] Lehigh Univ, Lehigh, PA 18015 USA

[4] Virginia Tech, Blacksburg, VA 24061 USA

来源：

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2020年

关键词：

HIGH-K DIELECTRICS; DEPOSITION; TECHNOLOGY;

D O I：

10.1109/IEDM13553.2020.9371942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The remarkable advancement of CMOS electronics over the past two decades has been greatly aided by innovations allowing dielectric scaling across both ends of the permittivity spectrum. This paper describes how new dielectric innovations beyond permittivity scaling will allow both the extension of Moore's law for another decade and usher in an array of new devices and computational paradigms.

引用

页数：4

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