Effects of silicon-on-insulator substrate on the residual stress within 3C-SiC/Si thin films

被引：12

作者：

Park, JH

Kim, JH

Kim, Y

Lee, BT ^{[1
]}

Jang, SJ

Moon, CK

Song, HJ

机构：

[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Photon & Elect Thin Film Lab, Kwangju 500757, South Korea

[2] Dongshin Univ, Dept Phys, Naju 520714, Jeonranamdo, South Korea

[3] Korea Inst Nucl Safety, Taejon 305338, South Korea

[4] Korea Basic Sci Inst, Gwangju Branch, Kwangju 500757, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.1608495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-crystalline 3C-SiC heteroepitaxial layers were grown on silicon-on-insulator (SOI) and Si wafers, to investigate effects of SOI substrates on the film quality. Residual stress measurement using a laser scan method and the Raman scattering spectroscopy indicated that internal stress within SiC films on SOI were indeed reduced, when compared with that of SiC films on Si. (C) 2003 American Institute of Physics.

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页码：1989 / 1991

页数：3

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