Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes

被引：34

作者：

Pinos, A. ^{[1
]}

Marcinkevicius, S. ^{[1
]}

Yang, J. ^{[2
]}

Gaska, R. ^{[2
]}

Shatalov, M. ^{[2
]}

Shur, M. S. ^{[3
]}

机构：

[1] Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden

[2] Sensor Elect Technol Inc, Columbia, SC 29209 USA

[3] Rensselaer Polytech Inst, Ctr Integrated Elect, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 09期

基金：

美国国家科学基金会; 瑞典研究理事会;

关键词：

NM; EMISSION;

D O I：

10.1063/1.3506697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aging under high current stress of AlGaN quantum well based light emitting diodes with high and low Al content in the wells emitting at 270 nm and 335 nm, respectively, has been studied by scanning near field optical spectroscopy and far field electroluminescence, photoluminescence and time-resolved photoluminescence. In the high Al content devices emission band related to optical transitions in the cladding involving nitrogen vacancies has been found. Evolution of this band during aging suggests that the role of N vacancies is crucial in the aging process by aiding defect generation and formation of high conductivity channels. (C) 2010 American Institute of Physics. [doi:10.1063/1.3506697]

引用

页数：6

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