Two-photon transitions in systems with semiconductor quantum dots

被引：69

作者：

Fedorov, AV ^{[1
]}

Baranov, AV ^{[1
]}

Inoue, K ^{[1
]}

机构：

[1] HOKKAIDO UNIV, RES INST ELECT SCI, SAPPORO, HOKKAIDO 060, JAPAN

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.54.8627

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical interband and intraband transitions in semiconductor quantum dots (QD's) are analyzed theoretically. It is found that three-dimensional confinement essentially modifies intraband matrix elements of the electron-photon interaction in the QD's as compared to the bulk materials. This effect is quite important for the multiphoton processes. It is shown that two competitive types of two-photon transitions with different selection rules are in the QD's of noncentrosymmetric semiconductor and amplitudes of these transitions differently depend on light polarization, electron and hole effective masses, and QD radius as well. Analytical expressions for the two-photon absorption coefficient are derived for the strong confinement regime, taking into account the size distribution of the nanocrystals.

引用

页码：8627 / 8632

页数：6

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