Size and strain effects on mechanical and electronic properties of green phosphorene nanoribbons

被引:4
作者
Garrison, Evan [1 ]
Chan, Candace K. [2 ]
Peng, Xihong [1 ,3 ]
机构
[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
[2] Arizona State Univ, Sch Engn Matter Transport & Energy, Mat Sci & Engn, Tempe, AZ 85287 USA
[3] Arizona State Univ, Coll Integrat Sci & Arts, Mesa, AZ 85212 USA
关键词
TOTAL-ENERGY CALCULATIONS; WAVE; SEMICONDUCTOR; GRAPHENE; PHASE;
D O I
10.1063/1.5054619
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Recently, a phosphorus isomer named green phosphorus was theoretically predicted with a similar interlayer interaction compared to that of black phosphorus, thus indicating that individual layers can be mechanically exfoliated to form two-dimensional (2D) layers known as green phosphorene. In this work, we investigated the properties of green phosphorene nanoribbons along both armchair and zigzag directions with ribbon widths up to 57 A using density functional theory. Effects of ribbon width and strain on the mechanical and electronic properties of the ribbons were studied. The Young's modulus, effect of quantum confinement on the band gap, and effect of strain on the band structures of the ribbons were investigated. The green phosphorene ribbons were found to exhibit prominent anisotropic properties, with the Young's modulus in the range of 10-35 GPa for the armchair green phosphorene nanoribbons (AGPNR) and 160-170 GPa for the zigzag green phosphorene nanoribbons (ZGPNR), which are the same order of magnitude as those of the 2D sheets. The work function was found to be between 5 eV similar to 5.7 eV for the range of widths studied. Both size and strain trigger direct-indirect band gap transitions in the ribbons and their transition mechanisms were discussed. (c) 2018 Author(s).
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页数:7
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共 30 条
[1]   The Extended Stability Range of Phosphorus Allotropes [J].
Bachhuber, Frederik ;
von Appen, Joerg ;
Dronskowski, Richard ;
Schmidt, Peer ;
Nilges, Tom ;
Pfitzner, Arno ;
Weihrich, Richard .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2014, 53 (43) :11629-11633
[2]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[3]   Engineering direct-indirect band gap transition in wurtzite GaAs nanowires through size and uniaxial strain [J].
Copple, Andrew ;
Ralston, Nathaniel ;
Peng, Xihong .
APPLIED PHYSICS LETTERS, 2012, 100 (19)
[4]   Prediction of Green Phosphorus with Tunable Direct Band Gap and High Mobility [J].
Han, Woo Hyun ;
Kim, Sunghyun ;
Lee, In-Ho ;
Chang, Kee Joo .
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2017, 8 (18) :4627-4632
[5]   Semiconductor Nanowires for Energy Conversion [J].
Hochbaum, Allon I. ;
Yang, Peidong .
CHEMICAL REVIEWS, 2010, 110 (01) :527-546
[6]   SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].
KOHN, W ;
SHAM, LJ .
PHYSICAL REVIEW, 1965, 140 (4A) :1133-&
[7]   Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].
Kresse, G ;
Furthmuller, J .
PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186
[8]   From ultrasoft pseudopotentials to the projector augmented-wave method [J].
Kresse, G ;
Joubert, D .
PHYSICAL REVIEW B, 1999, 59 (03) :1758-1775
[9]   Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set [J].
Kresse, G ;
Furthmuller, J .
COMPUTATIONAL MATERIALS SCIENCE, 1996, 6 (01) :15-50
[10]  
Li LK, 2017, NAT NANOTECHNOL, V12, P21, DOI [10.1038/nnano.2016.171, 10.1038/NNANO.2016.171]