Empirical characteristics and extraction of overall variations for 65-nm MOSFETs and beyond

被引：25

作者：

Kanno, Michihiro ^{[1
]}

Shibuya, Akira ^{[1
]}

Matsumura, Masao ^{[1
]}

Tamura, Kazuhiro ^{[1
]}

Tsuno, Hitoshi ^{[1
]}

Mori, Shigetaka ^{[1
]}

Fukuzaki, Yuzo ^{[1
]}

Gocho, Tetsuo ^{[1
]}

Ansai, Hisahiro ^{[1
]}

Nagashima, Naoki ^{[1
]}

机构：

[1] Sony Corp, Semicond Business Grp, Semicond Technol Dev Div, Atsugi, Kanagawa 2430014, Japan

来源：

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2007年

关键词：

D O I：

10.1109/VLSIT.2007.4339738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a practical methodology to extract overall variations of MOSFET characteristics on 65nm node and beyond. Firstly, we show how MOSFET variations are originated and categorized by these causes and unit regions. Secondly, we demonstrate how these variations are quantitatively separated into random and systematic components from experimental results by transistor array Test Element Group (TEG). The results reveal that the ratio of total variations to random components becomes greater with scaling down, and the changes of mean values of MOSFET characteristics, which depend on layout parameters, are too large to be negligible compared to total variations. Finally we show the flowchart to accurately extract MOSFET overall variations for 65nm and beyond.

引用

页码：88 / 89

页数：2

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