One-step fabrication of uniform Si-core/CdSe-sheath nanocables

被引：85

作者：

Li, Q ^{[1
]}

Wang, CR ^{[1
]}

机构：

[1] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2003年 / 125卷 / 33期

关键词：

D O I：

10.1021/ja035787i

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A simple one-step thermal evaporation of CdSe powder using Si substrate at controlled conditions results in ultrauniform Si-core/CdSe-sheath nanocables. These nanocables are ≃80 nm in diameter and several tens of micrometers in length. Detailed microstructure and chemical composition analysis of the nanocables indicates that they are composed of a single crystalline Si (cubic) core and CdSe (hexagonal) sheath. The experimental evidence suggested that the Si nanowires can be directly grown from the Si substrate via an oxide-assisted growth mechanism and further served as templates for CdSe, resulting in nanocable heterostructures. Copyright © 2003 American Chemical Society.

引用

页码：9892 / 9893

页数：2

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