Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

被引:30
作者
Wang, Jian Tao [1 ]
Shi, Xiang Lei [1 ]
Zhong, Xin Hua [1 ]
Wang, Jian Nong [1 ]
Pyrah, Leo [2 ]
Sanderson, Kevin D. [2 ]
Ramsey, Philip M. [2 ]
Hirata, Masahiro [3 ]
Tsuri, Keiko [3 ]
机构
[1] E China Univ Sci & Technol, Sch Mech & Power Engn, Sch Chem & Mol Engn, Nano X Res Ctr, Shanghai 200237, Peoples R China
[2] Pilkington Technol Management Ltd, Pilkington European Tech Ctr, Lathom L40 5UF, Lancs, England
[3] Nippon Sheet Glass Co Ltd, R&D, Itami, Hyogo 6648520, Japan
基金
中国国家自然科学基金;
关键词
Fluorine-doped tin oxide; Morphology control; Roughness; Light trapping; Solar cells; CHEMICAL-VAPOR-DEPOSITION; PHYSICAL-PROPERTIES; OPTICAL-PROPERTIES; ZINC-OXIDE; TRANSPARENT; SNO2; GROWTH; MECHANISM;
D O I
10.1016/j.solmat.2014.09.043
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Current development of fluorine doped tin oxide (FTO) films for the enhancement of light trapping is limited by the tradeoff between roughness and transmittance, since none of them can be improved without sacrificing the other. In this study, we report increases in roughness from 13 to 60 nm and haze from 1.2 to 10.3% for FTO films with a thickness of only 300 nm, by inclusion of different additives into the deposition system. Such significant improvements are achieved whilst maintaining a low resistivity and high transmittance. This results from the development of the desired pyramidal grain morphology associated with the strengthening of (110) preferred orientation and concurrent weakening of (200) and/or (301) preferred orientations. Thus, our study provides a general strategy for developing morphology-controlled, FTO films to be compared with current commercial ones with a roughness of 38 nm and a thickness of 800 nm, for improving the light trapping and thus the efficiency of solar cells. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:578 / 588
页数:11
相关论文
共 43 条
[1]   Effect of heavy doping in SnO2:F films [J].
Agashe, C ;
Major, SS .
JOURNAL OF MATERIALS SCIENCE, 1996, 31 (11) :2965-2969
[2]   EFFECT OF SN INCORPORATION ON THE GROWTH-MECHANISM OF SPRAYED SNO2 FILMS [J].
AGASHE, C ;
TAKWALE, MG ;
BHIDE, VG ;
MAHAMUNI, S ;
KULKARNI, SK .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (12) :7382-7386
[3]   Physical properties of highly oriented spray-deposited fluorine-doped tin dioxide films as transparent conductor [J].
Agashe, Chitra ;
Huepkes, J. ;
Schoepe, G. ;
Berginski, M. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (08) :1256-1262
[4]  
[Anonymous], 1980, Structure of metals: crystallographic methods principles and data
[5]   Electrochromic smart windows: energy efficiency and device aspects [J].
Azens, A ;
Granqvist, CG .
JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 2003, 7 (02) :64-68
[6]  
Bartl R., 2006, P EUR PV SOL EN C DR
[7]   THICKNESS DEPENDENCE OF TRANSPORT-PROPERTIES OF DOPED POLYCRYSTALLINE TIN OXIDE-FILMS [J].
BELANGER, D ;
DODELET, JP ;
LOMBOS, BA ;
DICKSON, JI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) :1398-1405
[8]   Self-passivated copper as a gate electrode in a poly-Si thin film transistor liquid crystal display [J].
Chae, GS ;
Soh, HS ;
Lee, WH ;
Lee, JG .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (01) :411-415
[9]   TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].
CHOPRA, KL ;
MAJOR, S ;
PANDYA, DK .
THIN SOLID FILMS, 1983, 102 (01) :1-46
[10]   Development of atmospheric pressure CVD processes for high-quality transparent conductive oxides [J].
de Graaf, Ariel ;
van Deelen, Joop ;
Poodt, Paul ;
van Mol, Ton ;
Spee, Karel ;
Grob, Frank ;
Kuypers, Ando .
PROCEEDINGS OF INORGANIC AND NANOSTRUCTURED PHOTOVOLTAICS, 2010, 2 (01) :41-48