Evolution of Low-Noise Avalanche Photodetectors

被引：41
作者：
Campbell, Joe C. [1 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2022年 / 28卷 / 02期
基金：
美国国家科学基金会;
关键词：
Photodiode; photodetector; avalanche photodiode; IMPACT IONIZATION COEFFICIENTS; LOW EXCESS NOISE; MULTIPLICATION NOISE; DEAD SPACE; HIGH-SPEED; EPITAXIAL SILICON; BANDWIDTH PRODUCT; HIGH-GAIN; PHOTODIODES; ELECTRON;
D O I：
10.1109/JSTQE.2021.3092963
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews materials and structural approaches that have been developed to reduce the excess noise in avalanche photodiodes and increase the gain-bandwidth product.
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收藏
页数：11
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