Scanning tunneling microscopy on Sn/Si(110) system

被引:9
作者
An, T [1 ]
Yoshimura, M [1 ]
Ueda, K [1 ]
机构
[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
关键词
STM; Sn; Si(110); superstructure; crystal growth;
D O I
10.1016/S0169-4332(98)00036-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Surface superstructures on Sn/Si(110) system were investigated by scanning tunneling microscopy (STM). In addition to three superstructures reported previously, (4,3) X ((2) over bar,2), (3,0) X ((1) over bar,3) and (3,3) X ((2) over bar,1), new types of superstructures such as (2,0) X ((1) over bar,4) were clearly observed during transformation processes between these phases. It was found that the (4,3) X ((2) over bar,2) and (3,0) X ((1) over bar,3) consist of Sn trimers which arrange two- and one-dimensionally on the surface, respectively. The latter superstructure contains extra Sn atoms as monomers. The image of (3,3) X ((2) over bar,1) consists of cluster protrusions that contain four or more Sn atoms arranged two-dimensionally. It was also found that the (2,0) X ((1) over bar,4) superstructure consists of Sn dimes rows along the [(1) over bar 10] direction. Transition processes between the phases is discussed, based on the structural models proposed in the present study. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:118 / 122
页数:5
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