An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

被引：52
作者：
Palestri, P
Eminente, S
Esseni, D
Fiegna, C
Sangiorgi, E
Selmi, L
机构：
[1] Univ Udine, DIEGM, I-33100 Udine, Italy
[2] Univ Ferrara, ENDIF, I-44100 Ferrara, Italy
[3] ARCES Ctr, I-40100 Bologna, Italy
[4] DEIS, I-47023 Cesena, Italy
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 05期
关键词：
MOSFETs; Monte-Carlo method; mobility models; silicon-on-insulator (SOI); nano-scale;
D O I：
10.1016/j.sse.2004.11.024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effects that are most relevant for the analysis of nano-scale MOSFETs with either bulk or single and double gate silicon-on-insulator (SOI) architectures and silicon film thickness down to approximately 10 nm. Corrections to the self-consistent electrostatic potential and a new model for the surface roughness scattering have been included. The effectiveness of the approach has been tested simulating carrier transport in a 25 nm double gate SOI MOSFET. The simulation results point out the strong influence of the scattering on the ON current even in these ultra-scaled devices. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：727 / 732
页数：6
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