Correlation between scanning-probe-induced spots and fixed positive charges in thin HfO2 films

被引：11

作者：

Miyata, N ^{[1
]}

Ota, H

Ichikawa, M

机构：

[1] Natl Inst Adv Ind Sci & Technol, ASRC, MIRAI, Tsukuba, Ibaraki 3058562, Japan

[2] Univ Tokyo, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 11期

关键词：

Annealing - Capacitance - Carrier mobility - Dielectric films - Hafnium compounds - Interfaces (materials) - MOS devices - Scanning tunneling microscopy - Threshold voltage;

D O I：

10.1063/1.1884750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy observations revealed unstable species that likely act as fixed positive charges in thin HfO2 films. The density of these species can be practically reduced by low-temperature postdeposition annealing (similar to 550 degrees C). The results of various annealing conditions suggest that hydrogenous species created by the reaction of moisture with as-deposited HfO2 films causes this type of fixed positive charges in the films. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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