Structure and electrical studies of fluorinated amorphous carbon films prepared by electron cyclotron resonance/chemical-vapor deposition

被引:7
作者
Huang, KP
Lin, P [1 ]
Shih, HC
机构
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 6A期
关键词
a-C : F; films; ECR-CVD; dielectric; conductivity; bonding;
D O I
10.1143/JJAP.42.3598
中图分类号
O59 [应用物理学];
学科分类号
摘要
Fluorinated amorphous carbon (a-C:F) films of high fluorine content were prepared by radio-frequency (RF) bias assisted electron cyclotron resonance/chemical-vapor deposition (ECR-CVD) with a variable fluorine-to-carbon (F/C) ratio of the feed gases. The films were characterized by X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS) and transmission electron microscopy (TEM). A low dielectric constant of around 1.5 and high dielectric strength beyond 35 MV/cm were obtained under the as-deposited and annealed conditions, respectively. The measured huge current surge and electrical conductivity of the films were discussed on the basis of the nanovoids and sp(2)/Sp(3) bonding fractions as derived from the above characterizations. [DOI: 10.1143/JJAP.42.3598].
引用
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页码:3598 / 3602
页数:5
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