Low Leakage Current Density Behaviour of Nanofilms PbTiO3 Based MIM Capacitor

Lead titanate (PbTiO3) has been precisely studied on the films preparation for the purpose towards complex storage applications such as capacitor, transistor, and ferroelectric random access memory. In the need to have high quality (PbTiO3) thin films, the lead (Pb) volatilization seems necessary to be realized at first place. Therefore the problem can be solved by addition of Pb content and also controlling the microstructural property during annealing treatment. I-V characteristic of the films prepared at different Pb content showed improvement where indication of low leakage current plus play impressively high resistive films around similar to 10(-9) A and similar to 10(6) Omega. cm(2) respectively. This significant improvement attributed to the low dielectric loss, tan delta (0.1) plus high dielectric constant, k value (151) which is at frequency dependency. The thin films surface roughness of PbTiO3 were observed by atomic force microscopy (AFM) that being determined by direct sensed on peaks and valleys of the crystal structures. The experimental method for preparing the films was done through sol gel, spin coating method at repetition of coating layers and involved low synthesis temperature for crystallization process.