Effect of Rapid Thermal Annealing Ambient on Photoluminescence of ZnO Films

被引：6
作者：
Xu Xiao-Yan
Ma Xiang-Yang
Jin Lu
Yang De-Ren [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2012年 / 29卷 / 03期
基金：
中国国家自然科学基金;
关键词：
THIN-FILMS; ULTRAVIOLET; EMISSION; NANORODS; PROPERTY; OXYGEN;
D O I：
10.1088/0256-307X/29/3/037301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effects of rapid thermal annealing (RTA) ambient on photoluminescence (PL) of sputtered ZnO films are investigated. The RTA at 800 degrees C under either oxygen (O-2) or argon (Ar) ambient can remarkably enhance the PL of the ZnO films due to the improved crystallinities of the ZnO films. It is somewhat unexpected that the ZnO film which received the RTA under O-2 ambient exhibits weaker near-band-edge (NBE) PL than that which received the RTA under Ar ambient. It is supposed that a certain amount of negatively charged oxygen species exist on the surface of the ZnO film that received the RTA under O-2 ambient, leading to a build-in electric field. This in turn reduces the recombination probability of photo-generated electrons and holes, resulting in the suppressed NBE PL.
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页数：3
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