Epitaxial Growth of Germanium on Silicon for Light Emitters

被引：107

作者：

Chen, Chengzhao ^{[1
,2
]}

Li, Cheng ^{[1
]}

Huang, Shihao ^{[1
]}

Zheng, Yuanyu ^{[1
]}

Lai, Hongkai ^{[1
]}

Chen, Songyan ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China

[2] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Peoples R China

来源：

INTERNATIONAL JOURNAL OF PHOTOENERGY | 2012年 / 2012卷

基金：

中国国家自然科学基金;

关键词：

HIGH-QUALITY GE; CHEMICAL VAPOR-DEPOSITION; SI; LAYERS; INTEGRATION; TRANSISTORS; INSULATOR; SI(001); THICK; GAIN;

D O I：

10.1155/2012/768605

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of similar to 4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

引用

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