Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICs

被引：81

作者：

Bonen, S. ^{[1
]}

Alakusu, U. ^{[1
]}

Duan, Y. ^{[1
]}

Gong, M. J. ^{[1
]}

Dadash, M. S. ^{[1
]}

Lucci, L. ^{[2
,3
]}

Daughton, D. R. ^{[4
]}

Adam, G. C. ^{[5
,6
]}

Iordanescu, S. ^{[5
]}

Pasteanu, M. ^{[5
]}

Giangu, I. ^{[5
]}

Jia, H. ^{[7
]}

Gutierrez, L. E. ^{[7
]}

Chen, W. T. ^{[7
]}

Messaoudi, N. ^{[8
]}

Harame, D. ^{[2
]}

Mueller, A. ^{[5
]}

Mansour, R. R. ^{[7
]}

Asbeck, P. ^{[9
]}

Voinigescu, S. P. ^{[1
]}

机构：

[1] Univ Toronto, Edward S Rogers Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

[2] GlobalFoundries Fab1 LLC & Co KG, D-01109 Dresden, Germany

[3] CEA Leti, MINATEC Campus 17, F-38054 Grenoble, France

[4] Lake Shore Cryotron Inc, Westerville, OH 43082 USA

[5] IMT Bucharest, Bucharest 077190, Romania

[6] George Washington Univ, Dept Elect & Comp Engn, Washington, DC 20052 USA

[7] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

[8] Keysight Technol, Mississauga, ON L5N 2M2, Canada

[9] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

cryogenics; millimeter waves; quantum computing; semiconductor quantum dots; silicon germanium; silicon-on-insulator;

D O I：

10.1109/LED.2018.2880303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An approach is proposed to realize largescale, "high-temperature" and high-fidelity quantum computing integrated circuits based on single-and multiple-coupled quantum-dot electron-and hole-spin qubits monolithically integrated with the mm-wave spin manipulation and readout circuitry in a commercial CMOS technology. Measurements of minimum-size 6 nm x 20 nm x 80 nm Si-channel n-MOSFETs (electron-spin qubit), SiGe-channel p-MOSFETs (hole-spin qubit), and double quantum-dot complementary qubits reveal strong quantum effects in the subthreshold region at 2 K, characteristic of resonant tunneling in a quantum dot. S-parameter measurements of a transimpedance amplifier (TIA) for spin readout show an improved performance from 300 K to 2 K. Finally, the qubit-with-TIA circuit has 50-Omega output impedance and 78-dB Omega transimpedance gain with a unity-gain bandwidth of 70 GHz and consumes 3.1 mW.

引用

页码：127 / 130

页数：4

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