Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy

被引：19

作者：

Cheng, TS ^{[1
]}

Novikov, SV

Foxon, CT

Orton, JW

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 109卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

semiconductors; epitaxy; impurities in semiconductors;

D O I：

10.1016/S0038-1098(98)00601-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on an investigation by Auger Electron Spectroscopy (AES) of Mg-doped GaN films grown by Molecular Beam Epitaxy (MBE). This study shows that there is a finite concentration gradient in a region close to the surface (10-80 nm) in which the Mg concentration decreases rapidly from a few percent of a monolayer to a bulk value of about (2-3) x 10(19) cm(-3) for heavily doped samples. Such behaviour can be understood in terms of a kinetically limited migration of the dopant to the surface during the growth. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：439 / 443

页数：5

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