n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

被引：9

作者：

Park, CH

Jeong, IS

Bae, HS

Kim, TG

Im, S

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 130650, South Korea

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 216卷

关键词：

ZnO; photodiode; implantation; isolation; photoelectric property;

D O I：

10.1016/j.nimb.2003.11.031

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5 x 10(13) cm(-2). We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45% under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, similar to380 nm) before they would reach n-ZnO/p-Si region. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：127 / 130

页数：4

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