n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

被引：9
作者：
Park, CH
Jeong, IS
Bae, HS
Kim, TG
Im, S
机构：
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[2] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 130650, South Korea
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 216卷
关键词：
ZnO; photodiode; implantation; isolation; photoelectric property;
D O I：
10.1016/j.nimb.2003.11.031
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5 x 10(13) cm(-2). We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45% under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, similar to380 nm) before they would reach n-ZnO/p-Si region. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：127 / 130
页数：4
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