Shape transition of InAs quantum dots by growth at high temperature

被引：153

作者：

Saito, H ^{[1
]}

Nishi, K ^{[1
]}

Sugou, S ^{[1
]}

机构：

[1] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Ibaraki, Osaka 3058501, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.123506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The shape of InAs quantum dots grown on GaAs substrates by molecular beam epitaxy is investigated at various growth temperatures. A dot with a new shape surrounded by {110} facets and having a high aspect ratio appears at temperatures over 510 degrees C. This dot is transformed from a pyramid shape (low aspect ratio) when its volume exceeds a critical value by raising the growth temperature. The shape transition indicates that the high-aspect-ratio dot is energetically favorable at a large volume. A narrow energy width of photoluminescence, 35 meV at room temperature, is obtained by the growth of the high-aspect-ratio dots, which have a fairly good size uniformity of less than 4% deviation. (C) 1999 American Institute of Physics. [S0003-6951(99)02209-3].

引用

页码：1224 / 1226

页数：3

共 14 条

[1] Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy [J].

Belk, JG ;

McConville, CF ;

Sudijono, JL ;

Jones, TS ;

Joyce, BA .

SURFACE SCIENCE, 1997, 387 (1-3) :213-226

[2] Structural transition in large-lattice-mismatch heteroepitaxy [J].

Chen, Y ;

Washburn, J .

PHYSICAL REVIEW LETTERS, 1996, 77 (19) :4046-4049

[3] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[4] Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition [J].

Heinrichsdorff, F ;

Mao, MH ;

Kirstaedter, N ;

Krost, A ;

Bimberg, D ;

Kosogov, AO ;

Werner, P .

APPLIED PHYSICS LETTERS, 1997, 71 (01) :22-24

[5] Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transition [J].

Lee, H ;

LoweWebb, RR ;

Yang, WD ;

Sercel, PC .

APPLIED PHYSICS LETTERS, 1997, 71 (16) :2325-2327

[6] Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction [J].

Lee, H ;

Lowe-Webb, R ;

Yang, WD ;

Sercel, PC .

APPLIED PHYSICS LETTERS, 1998, 72 (07) :812-814

[7] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].

LEONARD, D ;

POND, K ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692

[8] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[9] Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes [J].

Medeiros-Ribeiro, G ;

Bratkovski, AM ;

Kamins, TI ;

Ohlberg, DAA ;

Williams, RS .

SCIENCE, 1998, 279 (5349) :353-355

[10] SELF-ORGANIZED GROWTH OF REGULAR NANOMETER-SCALE INAS DOTS ON GAAS [J].

MOISON, JM ;

HOUZAY, F ;

BARTHE, F ;

LEPRINCE, L ;

ANDRE, E ;

VATEL, O .

APPLIED PHYSICS LETTERS, 1994, 64 (02) :196-198

← 1 2 →