A new substrate network model and parameter extraction for RF nano-CMOS

A new substrate network model for RF nano-CMOS and a parameter extraction method are proposed here. The model is composed of two resistances and one capacitance to accurately predict high frequency characteristics of nano-CMOS. The parameters are extracted and optimized both analytically and empirically using Z-parameter and Y-parameter analysis. A comparison between a conventional model and the proposed model shows that the proposed model is better in accuracy than conventional model. The measured and simulated data using the proposed model are in strong agreement up to 40.1 GHz.